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College of Electrical Engineering and Computer Science / 電機資訊學院
Electrical Engineering / 電機工程學系
Subthreshold Behavior of the SOI NMOS Device Consdiering BJT and DIBL Effects
Details
Subthreshold Behavior of the SOI NMOS Device Consdiering BJT and DIBL Effects
Journal
EUROSOI
Date Issued
2014-01
Author(s)
D. H. Lung
J. B. Kuo
JAMES-B KUO
URI
http://scholars.lib.ntu.edu.tw/handle/123456789/388600
Type
conference paper