Quenching of Defect-Induced Photoluminescence in a Boron-Nitride and Carbon Hetero-nanotube
Journal
Journal of Physical Chemistry Letters
Journal Volume
16
Journal Issue
7
Start Page
1711
End Page
1719
ISSN
19487185
Date Issued
2025
Author(s)
Gulo, Desman Perdamaian
Chen, Weiliang
Wang, Shuhui
Liu, Ming
Kauppinen, Esko I.
Takehara, Hikaru
Taguchi, Atsushi
Taniguchi, Takashi
Maruyama, Shigeo
Abstract
Using a 266 nm laser, we simultaneously observe Raman and photoluminescence (PL) spectra of vertically aligned boron-nitride nanotubes (VA-BNNT) and single-walled carbon nanotubes (SWNT) encapsulated by boron nitride (VA-SWNT@BNNT). The larger PL intensity in VA-BNNT compared to that of the h-BN single crystal suggests that VA-BNNT contains more defect states. VA-SWNT@BNNT exhibits two multiphonon Raman peaks at 3033 and 3142 cm-1 and four PL peaks at 4639, 5859, 6905, and 8293 cm-1. Notably, the PL intensity of VA-SWNT@BNNT is 20 times smaller than that of VA-BNNT. In VA-SWNT, we observe an additional Raman peak at 4677 cm-1, which closely aligns with the 4639 cm-1 PL peak of VA-SWNT@BNNT, suggesting photoexcited electrons in VA-BNNT may transfer to the Raman process within VA-SWNT component of VA-SWNT@BNNT. The first-principles calculations identify possible donor and acceptor states in BN bilayers with substitutional defects (e.g., carbon replacing boron or nitrogen). These defect states are also relevant to understanding the origin of PL in BNNT.
Subjects
Boron
Carbon
Nitrogen
Boron Nitride
Crystal Defects
Multiwalled Carbon Nanotubes (mwcn)
Nitrides
Boron Nitride Nanotubes
Defect State
Defects Induced
Multiphonons
Photoluminescence Intensities
Photoluminescence Peak
Photoluminescence Spectrum
Raman Peak
Single-walled Carbon
Vertically Aligned
Single-walled Carbon Nanotubes (swcn)
Boron
Boron Nitride Nanotube
Carbon
Nanotube
Nitrogen
Single Walled Nanotube
Article
Bilayer Membrane
Controlled Study
Photoluminescence
Publisher
American Chemical Society
Type
journal article