A superlattice infrared photodetector integrated with multiple quantum wells to improve the performance
Journal
IEEE Journal of Quantum Electronics
Journal Volume
43
Journal Issue
1
Pages
72-77
Date Issued
2007
Author(s)
CHIEH-HSIUNG KUAN
Lu, J.-H.
Wu, K.-J.
Hsieh, K.-J.
Kuan, C.-H.
Feng, J.-Y.
Lay, T.-S.
Yang, C.-W.
Tu, S.-L.
CHIEH-HSIUNG KUAN
Abstract
An infrared photodetector using the structure of a 15-period superlattice (SL) integrated with 50-period multiple quantum wells (MQWs) is investigated. The MQWs are utilized to reduce the noise current power and to add the response range. From the results of current ratio and response, the photocurrent of the SL is not reduced by the additional MQWs but the dark current is. Hence, due to the low noise gain and low dark current, the maximum detectivity (D*) can occur at low negative bias. In addition, the photovoltaic response even appears at 80 K. It is observed that the photoelectron transport directions from the SL and the MQWs are opposite under zero bias. In comparison with the SL with a single barrier, this structure also demonstrates the higher photocurrent and lower dark current. From our experimental results, this structure is appropriate for the operation at low bias and high temperature. However, the tradeoff is the small operational voltage range. © 2006 IEEE.
Subjects
Infrared detectors; Noise filter; Photovoltaic (PV) detectors; Quantum-well devices; Superlattice
SDGs
Other Subjects
Infrared detectors; Noise abatement; Photocurrents; Photovoltaic effects; Superlattices; Noise filter; Semiconductor quantum wells
Type
journal article