Novel Optical Properties of the Composites of InGaN/GaN Multiple Quantum Wells and CdSe Quantum Dots With Metal Nanoparticles
Date Issued
2006
Date
2006
Author(s)
Tsai, Zong-Lin
DOI
en-US
Abstract
We have demonstrated an alternative approach to obtain large enhancement of photoluminescence (PL) intensity in the composites of InGaN/GaN multiple quantum wells (MQWs) and CdSe/ZnS quantum dots (QDs) based on the combined effect of the Förster energy transfer and surface plasmon resonance. The relaxation dynamics has been investigated by both of steady-state and time-resolved PL measurements. It is found that the optimized enhancement can be achieved by the energy band alignment between MQWs and QDs and the resonance between the transition in QDs and the surface plasmon absorption in metal nanoparticles. Our approach provides a useful guideline for creating highly efficient optoelectronic devices.
Subjects
氮化銦鎵
硒化鎘
奈米金屬
InGaN/GaN
CdSe
Metal Nanoparticles
Type
thesis
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