Piezoelectric-field-enhanced lateral ambipolar diffusion coefficient in InGaN/GaN multiple quantum wells
Resource
Applied Physics Letters 78 (7): 928-930
Journal
Applied Physics Letters
Journal Volume
78
Journal Issue
7
Pages
928-930
Date Issued
2001
Author(s)
Abstract
Lateral diffusion behavior of two-dimensional carrier gas in InGaN/GaN multiple quantum wells was investigated using optical transient transmission measurements. A large ambipolar diffusion coefficient was observed, which was attributed to the enhancement by a strong piezoelectric field. This large ambipolar diffusion coefficient was found to increase with increased well width with a value on the order of 3000 cm2/s for a 62 Å well-width sample. © 2001 American Institute of Physics.
SDGs
Type
journal article