Passivation of InGaAs using in situ molecular beam epitaxy Al2O3/HfO2 and HfAlO/HfO2

Journal

Journal of vacuum science & technology. B, Microelectronics and nanometer structures

Journal Volume

28

Journal Issue

3

Pages

C3A9

Date Issued

2010

Author(s)

Chang, P

Lee, WC

Huang, ML

Lee, YJ

Kwo, J

URI

Type

journal article