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College of Electrical Engineering and Computer Science / 電機資訊學院
Electrical Engineering / 電機工程學系
CGS Capacitance Phenomenon of 100nm FD SOI CMOS Devices with HfO2 High-k Gate Dielectric Considering Vertical and Fringing Displacement Effects
Details
CGS Capacitance Phenomenon of 100nm FD SOI CMOS Devices with HfO2 High-k Gate Dielectric Considering Vertical and Fringing Displacement Effects
Journal
HKEDSSC
Pages
95-98
Date Issued
2005-12
Author(s)
Y. S. Lin
C. H. Lin
J. B. Kuo
K. W. Su
JAMES-B KUO
DOI
10.1109/EDSSC.2005.1635214
URI
http://scholars.lib.ntu.edu.tw/handle/123456789/317642
SDGs
[SDGs]SDG7
Type
conference paper
