Fabrication of lateral field emission structure
Date Issued
2007
Date
2007
Author(s)
Lin, Yen-Huan
DOI
zh-TW
Abstract
In this thesis, we use e-beam lithography system and reactive ion etching to fabricate a simple lateral field emission structure. Our design needs only one lithography process to define the cathode, anode and trench region. Then we use reactive ion etching to etch the trench region on the substrate. After this process, the cathode and anode region is separated by trench etching process. Then we use PVD to deposit a thin aluminum film to form the final structure.
We have done some measurements to verify the characteristics of our structure. With a set of low leakage current probe station system, we can easily detect the changing of emission current in orders. When using Folwer-Nordheim equation to make a plot, we can have a plot with partial linear region. Which means the current in this region is generated by field emission. Also, we discover our structure has low turn-on voltage down to 1V. With different cathode-anode distance, the emission characteristic and turn-on voltage are different for sure. Nonetheless, the turn-on voltages of our structures are below 2V, unless it has breakdown before. This low turn-on voltage characteristic is very useful for further application.
Subjects
場發射
橫向結構
field emission
lateral atructure
Type
thesis
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