Growth and Characterization of Germanium Material on Insulator
Date Issued
2008
Date
2008
Author(s)
Yu, John Han
Abstract
Abstractn order to overcome the nonideal effects in electronics devices caused by the device scaling down, silicon-on-insulator (SOI) material is an ideal substrate for devices fabrication. Silicon (Si) and germanium (Ge) are both group-IV material, and Ge possesses higher electron and hole mobilities as well as better optical properties as compared to Si. To combine the advantages of SOI and Ge materials, the germaniumon-insulator (GOI) approach is one of the best solutions for substrate engineering. raditional fabrication methods for GOI material, such as wafer bonding, Smart Cut, SIMOX, and Ge condensation, require either long process time or high cost. The liquid phase epitaxy (LPE) technique can solve these issues by utilizing the defect necking mechanism to obtain high-quality GOI. Patterned insulators are used to block the threading dislocation propagation originating from the re-crystallized Ge during the rapid thermal anneal (RTA) process. However, large-area GOI is difficult to be obtained by the LPE process, and the Ge crystal orientation might be twisted during the high temperature annealing process. he LPE method for Ge material fabrication on insulators is investigated in this thesis. Special Ge pattern structures, including the rib structure, growth from two-end seeding window, multi-width structure, defect-block structure, Ge growth-range-urvey structure, coplanar symmetric structure and waveguide structure, are designed. The material characterization by the transmission electron microscopy (TEM) and surface morphology analysis by the atomic force microscopy (AFM) will also be discussed.
Subjects
Germanium
Germanium-on-Insulator
Epitaxy
Liquid-Phase-Epitaxy
TEM
AFM
Type
thesis
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