Charge storage characteristics of nonvolatile memories with chemically-synthesized and vacuum-deposited gold nanoparticles
Journal
Current Applied Physics
Journal Volume
15
Journal Issue
4
Pages
535-540
Date Issued
2015
Author(s)
Wang, Jer-Chyi
Liao, Chin-Hsiang
Chang, Ruey-Dar
Chang, Li-Chun
Wu, Chih-I.
Chang, Jung-Hung
Abstract
Carrier injection and charge loss characteristics of nonvolatile memories with chemically-synthesized (CS) and vacuum-deposited (VD) gold nanoparticles (Au-NPs) have been investigated. Compared to CS counterparts, the memories with VD Au-NPs exhibit a higher dot density of 3.77 × 1011 cm-2, leading to a larger memory window. Further, the energy from valence-band edge to vacuum level (EVB-vac) of tunneling oxide for the samples with CS and VD Au-NPs is found to be 9.04 and 9.85 eV respectively. The small EVB-vac value of the memories with CS Au-NPs is resulted from the formation of a thin chemical oxide (SiOx) on thermally-grown SiO2 tunneling layer during the chemically synthesized process, contributing to a slow erasing behavior. Besides, the programming of the memories with VD Au-NPs is saturated at high gate bias, which has been well-explained by the electrons induced potential coupling between Au-NPs. Superior data retention property and high temperature dependence of charge loss are observed for the memories with CS Au-NPs, which can be ascribed to the thick tunneling oxide layer by the additional SiOx film.
Type
journal article