Development of 3D Micorthermoelectric Cooler
Date Issued
2016
Date
2016
Author(s)
Chen, Shih-Kang
Abstract
In this thesis, we create the 3D microthermoelectric cooler, which has the 3D micro structure, to promote P-N couples on the unit area and reduce the thermal conductivity to improve efficiency of the device. The whole process, including 21 steps of semiconductor manufacturing technology, has to use 5 masks, and Ti was compatible with all semiconductor manufacturing technology. This design will be helpful for the applicability of the device and the compatibility with other electrical devices. We used plasma enhanced chemical vapor deposition technique to provide electrical insulation for device. The 850nm silicon dioxide (SiO2) layer is grown on the Si wafer. Also, we used the photoligraphy process, including coating photoresis, soft bake, exposure and development, to definite the graph, and deposit the Ti/Pt thin film as the bottom of electrode by using DC magnetron sputtering deposition technique. The thickness of Ti and Pt layers are respectively 40nm and 200nm. Besides, we used RF and DC magnetron sputtering deposition technique to deposit 1um Bi2.0Te2.7Se0.3 and 1um Bi0.4Te3.0Sb1.6 as the N-type and P-type thermoelectric material. Finaly, DC magnetron sputtering deposition technique was used to deposit the Ti/Pt thin film as the top of electrode. The thickness of Ti and Pt layers are respectively 1500nm and 500nm.
Subjects
Micorthermoelectric cooler
Bismuth-Telluride-based alloy
Seebeck Effect
Type
thesis