100GHz depletion-mode Ga2O3/GaN single nanowire MOSFET by photo-enhanced chemical oxidation method

Journal

Technical Digest - International Electron Devices Meeting, IEDM

Pages

30.3.1-30.3.4

Date Issued

2010

Author(s)

Yu, J.-W.

Wu, Y.-R.

Huang, J.-J.

DOI

10.1109/IEDM.2010.5703450

URI

https://scholars.lib.ntu.edu.tw/handle/123456789/499541

URL

https://www.scopus.com/inward/record.uri?eid=2-s2.0-79951838733&doi=10.1109%2fIEDM.2010.5703450&partnerID=40&md5=1be6ff7fe1a6766157fa149ded6fe1f5

Type

conference paper