Structure and formation mechanism of V defects in multiple InGaN/GaN quantum well layers

Journal

Journal of Applied Physics

Journal Volume

99

Journal Issue

7

Date Issued

2006

Author(s)

Shiojiri, M.

Chuo, C.C.

Hsu, J.T.

Yang, J.R.

Saijo, H.

DOI

10.1063/1.2180532

URI

https://scholars.lib.ntu.edu.tw/handle/123456789/491645

URL

https://www.scopus.com/inward/record.uri?eid=2-s2.0-33645920309&doi=10.1063%2f1.2180532&partnerID=40&md5=71054b4b1e99b4ec32c1ae8b9c7387fc

Type

journal article