The characteristic of HfO2 on strained SiGe
Resource
Materials Science in Semiconductor Processing 8 (2005) 209–213
Journal
Materials Science in Semiconductor Processing
Journal Volume
8
Journal Issue
2005
Pages
-
Date Issued
2005
Date
2005
Author(s)
Chen, T.C.
Lee, L.S.
Lai, W.Z.
Liu, C.W.
DOI
246246/2006111501264968
Abstract
The thermal stability of strained Si0.8Ge0.2 and Si devices with HfO2 gate dielectrics prepared by atomic layer
chemical vapor deposition is studied. The interfacial layer at the HfO2/Si or HfO2/SiGe interface changed after different
annealing temperatures. The thickness of the interfacial layer increases with increasing annealing temperature due to the
trace amount of oxygen in the chamber or at the HfO2 dielectric. The capacitance equivalent thickness (CET) increases
with increasing post-deposition annealing (PDA) temperature because of the increase of the interfacial layer. The
interfacial trap charge densities (Dit) for the SiGe and Si devices with the PDA temperature of 600 1C are found to be
7.51012 and 1.81011 cm 2 eV 1, respectively. The electrical characteristics of the SiGe device are slightly inferior to
the Si device due to the elemental Ge at the HfO2/SiGe interface. Obvious crystallization of HfO2 in SiGe devices with
higher annealing temperature causes the raising of leakage current.
Subjects
Compressively strained SiGe
HfO2
Annealing temperature
Type
journal article
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