AlN films on GaN: Sources of error in the photoemission measurement of electron affinity
Journal
Journal of Applied Physics
Journal Volume
89
Journal Issue
3
Date Issued
2001
Abstract
This communication corrects an error in the value previously reported by one of the authors for the electron affinity (EA) of AlN. A brief discussion is given of the potential errors in photoemission measurements of EA which affect this and other studies. Finally, a recommendation is given for 1.9 eV as the “true” EA of wurtzite AlN.
Type
journal article