Self-aligned inversion-channel In0.2Ga0.8As metal-oxide-semiconductor field-effect transistor with molecular beam epitaxy Al2 O3/Ga2O3(Gd2O 3) as the gate dielectric

Journal

Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics

Journal Volume

29

Journal Issue

3

Date Issued

2011

Author(s)

Chang, W.H.

Chiang, T.H.

Wu, Y.D.

Lin, C.A.

Kwo, J.

DOI

10.1116/1.3565057

URI

https://scholars.lib.ntu.edu.tw/handle/123456789/443376

URL

https://www.scopus.com/inward/record.uri?eid=2-s2.0-84905950002&doi=10.1116%2f1.3565057&partnerID=40&md5=95c36b59edc071f927494ae4a9c1f2a7

SDGs

[SDGs]SDG7

Type

journal article