Self-aligned inversion-channel In0.2Ga0.8As metal-oxide-semiconductor field-effect transistor with molecular beam epitaxy Al2 O3/Ga2O3(Gd2O 3) as the gate dielectric
Journal
Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics
Journal Volume
29
Journal Issue
3
Date Issued
2011
Author(s)
Abstract
Self-aligned inversion-channel In0.2Ga0.8As metal-oxide-semiconductor field-effect transistors (MOSFETs) with in situ molecular beam epitaxy grown Al2O3/Ga2O3(Gd2O3) (GGO) as a gate dielectric and a TiN metal gate have been fabricated on GaAs (100) substrates. A 4 μm gate-length MOSFET using a gate dielectric of Al2O3 (3 nm thick)/GGO (8 nm thick) demonstrates a maximum drain current of 9.5 μA/μm and an extrinsic transconductance of 3.9 μS/μm. The device performances are compared favorably with those of other inversion-channel GaAs MOSFETs on GaAs (100) and also of the device on GaAs (111)A substrates using atomic layer deposited Al2O3 as a gate dielectric.
SDGs
Type
journal article