“Band Readjustment” Effect with Applications to Solar Cells
Journal
IEEE Transactions on Electron Devices
Journal Volume
27
Journal Issue
4
Pages
844-850
Date Issued
1980
Author(s)
Abstract
Double-layer Au-(n)AlGaAs-(n)GaAs Schottky-barrier devices were examined. The interaction of the closely spaced Au-AlGaAs Schottky barrier and the AlGaAs-GaAs heterojunction was found to produce a novel phenomenon termed "band readjustment." This effect is applied to the design of high-efficiency solar cells. Three criteria are presented by which the open-circuit voltage and the short-circuit current of the solar cells can be improved separately. Current transport through the potential barrier, located within the heterojunction depletion region, is also discussed.
SDGs
Type
journal article