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  4. SIC/ALN piezoelectric energy harvesters for pulsed pressure sources in harsh environment applications
 
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SIC/ALN piezoelectric energy harvesters for pulsed pressure sources in harsh environment applications

Journal
Technical Digest - Solid-State Sensors, Actuators, and Microsystems Workshop
Pages
505-508
Date Issued
2012
Author(s)
Lai Y.-J
WEI-CHANG LI  
Lin C.-M
Felmetsger V.V
Senesky D.G
Pisano A.P.
DOI
10.31438/trf.hh2012.133
URI
https://www.scopus.com/inward/record.uri?eid=2-s2.0-84891696196&doi=10.31438%2ftrf.hh2012.133&partnerID=40&md5=d937924198d883f84a5ba7fd069afc67
https://scholars.lib.ntu.edu.tw/handle/123456789/625176
Abstract
Piezoelectric micromachined circular diaphragm energy harvesters for pulsed pressure sources have been fabricated and characterized. These devices utilize silicon carbide (SiC) as the structural material and aluminum nitride (AlN) as the active piezoelectric element to enable operation within harsh environments. In particular, the SiC/AlN energy harvesting device yields an output power density of 20 μW/cm2 and rms voltage of 0.2 V under pressure pulses of 1.09 psi (rms) at 2 kHz. Fabricated SiC/AlN harvester has been characterized at elevated temperatures as high as 250°C. This work not only demonstrates the first harsh environment energy harvesters based on SiC and AlN for a pulsed pressure environment, but also addresses its potentials for integrating energy harvesting power source with SiC circuitry and enabling self-powered wireless sensors. This type of sensing system can be used for the real-time monitoring of harsh environment energy system such as automotive engines, gas turbines and geothermal wells. © 2012 TRF.
Other Subjects
Actuators; Aluminum nitride; Automobile engines; Energy harvesting; Geothermal energy; Geothermal wells; III-V semiconductors; Microsystems; Piezoelectric devices; Piezoelectricity; Silicon carbide; Aluminum nitride (AlN); Elevated temperature; Energy harvesting device; Output power density; Piezoelectric elements; Piezoelectric energy harvesters; Real time monitoring; Silicon carbides (SiC); Solid-state sensors
Type
conference paper

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