Analysis of Capacitance Behavior in Polysilicon thin film transistor Devices simulation
Date Issued
2005
Date
2005
Author(s)
Lin, Song-Jun
DOI
zh-TW
Abstract
Abstract
Have proposed exchanging analysing in effect (Kink Effect ) DC direct current and AC that the electric current of the electric crystal of the low-temperature polycrystalline silicon membrane uprushes in this thesis.
And present trend chapter one in the future to the technology of the display, the effect that introduce the electric crystal component structure and electric current of low-temperature polycrystalline silicon membrane and uprush briefly.
Propose one can supply power way simulation spend , analyse models with physics basic low-temperature polycrystalline silicon membrane electric crystal electric current. Is it make Cheng component simulation software Tsuprem4 , and two-dimentional component simulation software MEDICI is it analyse component parameter to influence of Kink Effect , DC of direct current to come to utilize.
Propose one can supply power way simulation spend, analyse models with the electric electric capacity of crystal of low-temperature polycrystalline silicon membrane with basic physics. Analysing the influence of Kink Effect that the parameter of the component is exchanged to AC at the same time, the ones that discusses the connecting with between electric capacity change and this effect are closed.
Subjects
低溫多晶矽薄膜電晶體
Polysilicon thin film transistor Devices
Type
thesis
File(s)![Thumbnail Image]()
Loading...
Name
ntu-94-R92943122-1.pdf
Size
23.31 KB
Format
Adobe PDF
Checksum
(MD5):b2870fb2bef7e33ec67831bbd8c5c23c