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  4. Surface passivation of Cu(ln1-xGax)Se2 thin film solar cells with trioctlyphosphine:sulfide and blue phosphorescent organic light-emitting diode with mixed host
 
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Surface passivation of Cu(ln1-xGax)Se2 thin film solar cells with trioctlyphosphine:sulfide and blue phosphorescent organic light-emitting diode with mixed host

Date Issued
2014
Date
2014
Author(s)
Lin, Chuan-En
URI
http://ntur.lib.ntu.edu.tw//handle/246246/261911
Abstract
In this thesis, we studied the surface passivation of Cu(ln1-xGax)Se2 thin films and solar cells with trioctlyphosphine:sulfide (TOP:S), and realized a high efficiency blue phosphorescent OLEDs with different host materials. We used tricotlyphosphine:sulfide (TOP:S) to passivate CIGS thin film and CIGS solar cell. After TOP:S passivation (6 hr, 120 oC), optical intensity of steady state photoluminescence (PL) of CIGS thin film effectively enhanced 18.0 times and minority carrier lifetime (obtained from transient PL) improved 3.0 times. It means that TOP:S can effectively compensate the defects, impurities and dangling bonds on CIGS surface. For CIGS solar cell, we used TOP:S passivate the scribe induced damages and effectively improved device efficiency (1.3%), Jsc (1.0%) and Rsh (40%). When adding TOP:S passivation into a standard CIGS solar cell process before CdS CBD process, almost one order leakage current was improved after TOP:S passivation and enhancement of Jsc, PCE and Rsh were 6.5%, 1.4% and 8.3%, respectively. We used 3,-phenyl-4(1’-naphthyl)-5-phenyl-1,2,4-triazole (TAZ) as host material and doped iridium bis(4,6-di-fluorophenyl- pyridinato-N,C2,)picolinate (FIrpic) to fabricate the blue phosphorescent OLEDs, which could achieve current efficiency of 42.01 cd/A and power efficiency of 32.66 lm/W via tuning the thickness of electron transporting layer (ETL), emitting layer (EML) and the doping concentration. Furthermore, we introduced N,N’-dicarbazolyl-2,5-benzene (mCP) into the device structure to fabricate the blue phosphorescent OLEDs with mixed host. Via the tuning of mixed ratio of host, the thickness of ETL , the thickness of HTL and the thickness of EML, the high current efficiency of 47.22 cd/A, power efficiency of 31.66 lm/W and external quantum efficiency of 21.22% were obtained. Furthermore, we tested three carbazole-containing biphenyls derivatives host (Cbz-oxd, Cbz-bim and Cbz-taz) which were synthesized by Prof. Man-kit Leung’s research group. Current efficiency, power efficiency and external quantum efficiency of three host materials achieved 43.96 cd/A, 39.68 cd/A and 41.05 cd/A, 34.53 lm/W, 31.50 lm/W and 32.24 lm/W, 18.50%, 14.90% and 16.54%, respectively.
Subjects
混合式主體材料;表面鈍化;銅銦鎵硒薄膜太陽能電池
Type
thesis
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