Physical thickness 1.x nm ferroelectric HfZrOx negative capacitance FETs
Journal
International Electron Devices Meeting
Pages
1327-1330
Date Issued
2017
Author(s)
Lee, M.H.
Fan, S.-T.
Tang, C.-H.
Chen, P.-G.
Chou, Y.-C.
Chen, H.-H.
Kuo, J.-Y.
Xie, M.-J.
Liu, S.-N.
Jong, C.-A.
Li, K.-S.
Chen, M.-C.
Liu, C.W.