Effect of Hydrogen Passivation on Lightly N-Doped GaAs

Resource

Proceeding of the 5th International Conference on Shallow Impurity in Semiconductors

Mater. SCI Forum., Vol. 117-118, 429 (1993), 10.4028/www.scientific.net/MSF.117-118.429

Journal

5th International Conference on Shallow Impurity in Semiconductors

Pages

-

Date Issued

1992

Date

1992

Author(s)

URI

Type

conference paper

File(s)

Name

index.html

Size

23.16 KB

Format

HTML

Checksum

(MD5):059301e9c7480dac7520533c13b9ed3c