Back gate bias dependent quasi-saturation in a high-voltage SOI MOSFET: 2D analysis and closed-form analytical model
Resource
SOI Conference, 1994 Proceedings., 1994 IEEE International
Journal
SOI Conference, 1994 Proceedings., 1994 IEEE International
Pages
-
Date Issued
1994-10
Date
1994-10
Author(s)
Liu, C.M.
Kuo, J.B.
DOI
N/A
Abstract
This paper reports a simulation study on the back gate bias dependent quasi-saturation behavior in a high-voltage SOI MOSFET. A closed-form physical back-gate bias dependent quasi-saturation model for the high-voltage SOI MOS device has been derived. Based on the analysis, with a negative back gate bias, in contrast to the zero back gate bias case, the drain current at quasi-saturation is insensitive to the drain voltage since the depth of the conduction channel in the n-region is determined mainly by the back gate bias.
Type
journal article
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