Ultrafast valence intersubband hole relaxation in InGaN multiple-quantum-well laser diodes

Resource

Applied Physics Letters, 84 (23), pp. 4675-4677

Journal

Applied Physics Letters

Journal Volume

84

Journal Issue

23

Pages

4675-4677

Date Issued

2004

Date

2004

Author(s)

Gan, K.-G.

Sun, C.-K.

DenBaars, S. P.

Bowers, J. E.

URI

Type

journal article