Run-to-run control schemes for CMP process subject to deterministic drifts
Resource
Semiconductor Manufacturing Technology Workshop, 2000
Journal
Semiconductor Manufacturing Technology Workshop
Pages
251-258
Date Issued
2000-06
Date
2000-06
Author(s)
Abstract
During IC fabrication, the chemical-mechanical polishing (CMP) process usually suffers from a drift in the run-to-run removal rate due to the wear of the polishing pad. In this paper, two run-to-run control schemes, the predictor corrector control (PCC) and adjusted exponentially weighted moving average (d-EWMA) schemes, for processes under deterministic drifts are presented. The control performance of both schemes is analytically derived and the determination of the optimal control parameters is provided. Validation results using the field CMP data demonstrate the control effectiveness of both control schemes. © 2000 IEEE.
Subjects
drift; EWMA; run-to-run control
Other Subjects
Chemical mechanical polishing; Chemical polishing; Manufacture; Polishing; Semiconductor device manufacture; Chemical-mechanical polishing process; Control effectiveness; Control performance; drift; EWMA; Exponentially weighted moving average; Predictor corrector; Run-to-run control; Process control
Type
conference paper
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