Skip to main content
English
中文
Log In
Log in
Log in with ORCID
NTU Single Sign On
Have you forgotten your password?
Home
College of Science / 理學院
Applied Physics / 應用物理研究所
GaAs MOSFETs using Ga 2 O 3 (Gd 2 O 3) as gate dielectric
Details
GaAs MOSFETs using Ga 2 O 3 (Gd 2 O 3) as gate dielectric
Journal
1998 5th International Conference on Solid-State and Integrated Circuit Technology
Pages
685-688
Date Issued
1998
Author(s)
MINGHWEI HONG
URI
http://scholars.lib.ntu.edu.tw/handle/123456789/340102
Type
conference paper