Ultra-high-vacuum chemical vapor deposition of hetero-epitaxial Si 1-x-y Ge x C y thin films on Si(0 0 1) with ethylene (C 2 H 4 ) precursor as carbon source
Journal
Materials Science in Semiconductor Processing
Journal Volume
8
Journal Issue
1-3 SPEC. ISS.
Pages
15-19
Date Issued
2005
Author(s)
Type
conference paper