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College of Electrical Engineering and Computer Science / 電機資訊學院
Electrical Engineering / 電機工程學系
Experimental analysis of the Schottky barrier height of metal contacts in black phosphorus field-effect transistors
Details
Experimental analysis of the Schottky barrier height of metal contacts in black phosphorus field-effect transistors
Journal
Journal of Physics D: Applied Physics
Journal Volume
51
Journal Issue
13
Date Issued
2018
Author(s)
Chang, H.-M.
Fan, K.-L.
Charnas, A.
Ye, P.D.
Lin, Y.-M.
Wu, C.-I.
CHIH-I WU
CHAO-HSIN WU
DOI
10.1088/1361-6463/aab063
URI
https://scholars.lib.ntu.edu.tw/handle/123456789/498022
URL
https://www.scopus.com/inward/record.uri?eid=2-s2.0-85044158168&doi=10.1088%2f1361-6463%2faab063&partnerID=40&md5=f50dc49bf9f591740403e7c37035e341
Type
journal article