Experimental analysis of the Schottky barrier height of metal contacts in black phosphorus field-effect transistors

Journal

Journal of Physics D: Applied Physics

Journal Volume

51

Journal Issue

13

Date Issued

2018

Author(s)

Chang, H.-M.

Fan, K.-L.

Charnas, A.

Ye, P.D.

Lin, Y.-M.

Wu, C.-I.

DOI

10.1088/1361-6463/aab063

URI

https://scholars.lib.ntu.edu.tw/handle/123456789/498022

URL

https://www.scopus.com/inward/record.uri?eid=2-s2.0-85044158168&doi=10.1088%2f1361-6463%2faab063&partnerID=40&md5=f50dc49bf9f591740403e7c37035e341

Type

journal article