Thermal Behaviors of Interface Layer in ultra-thin HfO2 film grown on SiGe/Si substrate
Date Issued
2014
Date
2014
Author(s)
Liu, Yu-Kai
Abstract
In the recent year, hafnium dioxide (HfO2) has been investigating and applying on gate dielectric of CMOS devices to improve the scaling difficult for SiO2. To develop the higher speed application, strained SiGe is the suggested channel material due to its high carrier mobility as compare with Si-substrate. In this work, we demonstrated the optical and electronic measurements on HfO2 film reached 1.4 nm grown by ALD on the SiGe on Si and Si substrate, to determine the interfacial characteristics. The properties at interface layer of HfO2/SiGe have been calculated by our theoretical model used first-principles. Lattice mismatch causes tensile stress result in Ge migration during thermal treatment and existence of substoichimetric SiOx are predicted and verified in optical measurement. On the other hand, C-V and I-V measurements detect the electronic qualities for HfO2/SiGe on Si and HfO2/Si MOS capacitors, includes the effective dielectric constant (keff), flat band voltage shift (ΔVFB), density of interface trap (Dit), and the leakage current density. These differences could attribute to the existence of Ge oxide, Si diffusion, and band structure variation.
Subjects
二氧化鉿
高介電質材料
矽鍺磊晶層
介面層
金氧半電容器
Type
thesis
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