Suppression of gate leakage current in GaN MOS devices by passivation with photo-grown Ga2O3
Resource
Physica Status Solidi (C) 3 (6): 2291-2294
Journal
Physica Status Solidi (C) Current Topics in Solid State Physics
Journal Volume
3
Pages
2291-2294
Date Issued
2006
Date
2006
Author(s)
Wu, H.-M.
Abstract
We report the use of photo-enhanced chemical (PEC) technique to form high-quality metal oxide semiconductor (MOS) devices made of gallium oxide (Ga2O3)/gallium nitride (GaN). Gate leakage current density as low as 2×10-7 A/cm2 at a bias field up to 2 MV/cm is observed in the GaN MOS devices that are formed by novel PEC wet etching and have the top surface and mesa sidewall passivated by the photo-grown Ga2O3. The depth-resolved X-ray photo-emission spectra (XPS) and atomic-ratio analysis indicate that a intermediate and thin ∼ 20 nm GaON layer of graded composition forms the Ga2O 3/GaON/GaN system, which releases the interfacial strain and thus minimizes the density of interfacial states. The IV and high-frequency CV analyses reveal that the Ga2O3 layer can sustain an electrical breakdown field of 3.5 MV/cm and the structures have a low density of interfacial state (Dit) in the order of 1011 eV -1cm-2. We attribute these results to the immunity to surface damage by the novel PEC wet etching and the effective passivation on mesa sidewall and surface formed by the photo-grown Ga2O3. © 2006 WILEY-VCH Verlag GmbH & Co. KGaA,.
Event(s)
6th International Conference on Nitride Semiconductors, ICNS-6
SDGs
Other Subjects
Atomic-ratio analysis; Interfacial state; Leakage current density; Wet etching; 73.40.Qv; 81.05.Ea; 81.65.Cf; 82.45.Un; 82.80.Pv; 85.30.Tv; Electric breakdown; Etching; Gallium nitride; Interfacial energy; MOS devices; Passivation; X ray photoelectron spectroscopy; Emission spectroscopy; Wet etching; Leakage currents; MOS devices
Type
conference paper
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