Highly hydrophobic metal–organic framework for self-protecting gate dielectrics
Journal
Journal of Materials Chemistry A
Journal Volume
8
Journal Issue
24
Start Page
11958
End Page
11965
ISSN
2050-7488
2050-7496
Date Issued
2020
Author(s)
Arif I. Inamdar
Abhishek Pathak
Muhammad Usman
Kuan-Ru Chiou
Pei-Hsien Tsai
Shruti Mendiratta
Saqib Kamal
Yen-Hsiang Liu
Ming-Hsi Chiang
Kuang-Lieh Lu
Abstract
A hydrophobic metal-organic framework (MOF) showing high-κ behaviour was synthesized by the reaction of copper ions with 4,4′-(hexafluoroisopropylidene)diphthalic anhydride (HFDPA). The unique, highly hydrophobic nature of the material protects it from re-adsorbing water, even in a high humidity environment. The dielectric constant of the MOF showed an unprecedented increasing trend, reaching up to κ ≈ 99 at 300 K and 1 kHz after the complete removal of guest and coordinated water molecules. The unusual dielectric behaviour of the compound along with its water resistant properties is the first report of such behaviour and it paves the way for the development of moisture-stable microelectronic devices.
Publisher
Royal Society of Chemistry (RSC)
Type
journal article