Oxidation enhanced optical response on gallium nitride
Resource
Lasers and Electro-Optics, 2000. (CLEO 2000).
Journal
Pacific Rim Conference on Lasers and Electro-Optics, CLEO - Technical Digest
Pages
248-249
Date Issued
2000-05
Date
2000-05
Author(s)
DOI
N/A
Abstract
Photo-chemistry was used to enable a wet oxidation process of GaN in phosphorus acid solutions at room temperature. A reaction-rate limited oxidation process was revealed. Enhancement in the PL and photo-current (PC) response on a GaN was observed.
Event(s)
Conference on Lasers and Electro-Optics (CLEO 2000)
Other Subjects
Composition; Energy dispersive spectroscopy; Inorganic acids; Interfaces (materials); Oxidation; Photochemical reactions; Photocurrents; Photoluminescence; Redox reactions; Scanning electron microscopy; Thermal effects; Wetting; Galvanic cell; Oxidation enhanced optical response; Oxide layer thickness; Phosphorus acid; Wet oxidation; Semiconducting gallium compounds
Type
journal article
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Format
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