Reduced temperature dependence of luminescence from silicon due to field-induced carrier confinement
Resource
Applied Physics Letters 78 (3): 261-263
Journal
Applied Physics Letters
Journal Volume
78
Journal Issue
3
Pages
261-263
Date Issued
2001
Date
2001
Author(s)
Abstract
Electroluminescence from metal–oxide–semiconductor structures on Si was experimentally found to be much less temperature dependent than photoluminescence of Si. The physical reason is attributed to the field-induced carrier confinement in a small region, which contains much less impurity states, compared to the unconfined region. Thus, electron–hole recombination by radiation emission instead of through highly temperature-dependent impurity states is increased. A proposed model well explains the reduced temperature dependence with the field-induced carrier confinement.
Type
journal article
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