Self-Heating Mitigation of TreeFETs by Interbridges
Journal
IEEE Transactions on Electron Devices
Journal Volume
69
Journal Issue
8
Pages
4123
Date Issued
2022-08-01
Author(s)
Abstract
— Adding interbridges (IBs) as additional channels between nanosheets (NSs) can reduce not only the maximum temperature in local hotspot of device but also the junction temperature difference among channels. The Si098Ge002 IBs added into pSi NSs reduce the maximum device temperature by 9 ◦C and the maximum junction temperature difference among channels by 5 ◦C. This is attributed to the higher thermal conductivity of IBs than internal spacer (7 versus 2 W/K/m) to increase heat exchange between NSs. Further increasing the width of Si098Ge002 IBs from 5 to 10 nm can cause 14 ◦C reduction in the maximum device temperature and 6 ◦C reduction in the junction temperature difference due to 1.1X enhancement of heat exchange between NSs. Increasing the height of Si098Ge002 IBs from 20 to 30 nm can reduce the maximum device temperature by 22 ◦C but slightly increase the junction temperature difference by 1 ◦C due to 30% decrease in the heat exchange between NSs.
Subjects
Gate-all-around transistor | interbridge (IB) | nanosheet (NS) | self-heating | TreeFET
Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
Type
journal article