A new parametric proximity effect model calibration method for improving accuracy of post-lithography patterning prediction in sub-32-nm half-pitch low-voltage electron beam direct-write lithography
Journal
The 53th International Conference on Electron, Ion, and Photon Beam Technology and Nanofabrication 2009
Pages
P-1F-17
Date Issued
2009-05
Author(s)
Type
conference paper