High performance complementary Ge peaking FinFETs by room temperature neutral beam oxidation for sub-7 nm technology node applications
Journal
Technical Digest - International Electron Devices Meeting, IEDM
Date Issued
2017
Author(s)
Lee, Y.-J.
Hong, T.-C.
Hsueh, F.-K.
Sung, P.-J.
Chen, C.-Y.
Chuang, S.-S.
Cho, T.-C.
Noda, S.
Tsou, Y.-C.
Kao, K.-H.
Wu, C.-T.
Yu, T.-Y.
Jian, Y.-L.
Su, C.-J.
Huang, Y.-M.
Huang, W.-H.
Chen, B.-Y.
Chen, M.-C.
Huang, K.-P.
Li, J.-Y.
Chen, M.-J.
Li, Y.
Samukawa, S.
Wu, W.-F.
Huang, G.-W.
Shieh, J.-M.
Tseng, T.-Y.
Chao, T.-S.
Wang, Y.-H.
MIIN-JANG CHEN
JIUN-YUN LI
Type
conference paper