A switchable high-sensitivity photodetecting and photovoltaic device with perovskite absorber
Journal
Journal of Physical Chemistry Letters
Journal Volume
6
Journal Issue
9
Pages
1773-1779
Date Issued
2015
Author(s)
Abstract
Amplified photocurrent gain has been obtained by photodiodes of inorganic semiconductors such as GaAs and Si. The avalanche photodiode, developed for high-sensitivity photodetectors, requires an expensive vapor-phase epitaxy manufacture process and high driving voltage (50-150 V). Here, we show that a low-cost solution-processed device using a planar-structured ferroelectric organo-lead triiodide perovskite enables light detection in a large dynamic range of incident power (10-7-10-1 W cm-2) by switching with small voltage (-0.9 to +0.5 V). The device achieves significantly high external quantum conversion efficiency (EQE) up to 2.4 × 105% (gain value of 2400) under weak monochromatic light. On a single dual-functional device, incident small power (0.2-100 μW cm-2) and medium to large power (>0.1 mW cm-2) are captured by reverse bias and forward bias modes, respectively, with linear responsivity of current. For weak light detection, the device works with a high responsivity value up to 620 A W-1. © 2015 American Chemical Society.
Subjects
amplification; ferroelectricity; perovskite photovoltaic cell; photoconductivity; photodetector
SDGs
Other Subjects
Amplification; Chemical detection; Ferroelectricity; Perovskite; Photoconductivity; Photodetectors; Photodiodes; Photoelectrochemical cells; Photons; Photovoltaic cells; Functional devices; Inorganic semiconductors; Low-cost solution; Manufacture process; Monochromatic light; Photovoltaic devices; Planar structured; Quantum conversion efficiency; Bias voltage
Type
journal article