Design of an X-band Oscillator Using Substrate-integrated Cavity
Date Issued
2004
Date
2004
Author(s)
Yen, Chu-Chuan
DOI
en-US
Abstract
This thesis presents a design of the substrate-integrated cavity to achieve a high loaded Q-factor of 400. The cavity is fully planar and has the facility in integration. Based on the high-Q substrate-integrated cavity, an X-band oscillator is fabricated and measured with 10 dBm output power at 10 GHz and a phase noise of -110 dBc/Hz at 100 kHz offset from the carrier. Measurements validate the superiority of the cavity oscillator with a 20-dB phase noise improvement at the same frequency offset against the microstrip oscillator in the same process. The cavity oscillator fabricated in this thesis provides a stable and compact frequency source and has the potential to be developed in millimeter wave frequency range.
Subjects
共振腔
振盪器
基板集成
substrate-integrated cavity
low phase noise oscillator
high-q
Type
thesis
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