Negative differential transconductance in MoSe2/h-BN/WSe2 vertical structure
Journal
Applied Materials Today
Journal Volume
44
Start Page
102725
ISSN
2352-9407
Date Issued
2025-06
Author(s)
Le Thi, Hai Yen
Uddin, Inayat
Phan, Nhat Anh Nguyen
Khan, Muhammad Atif
Chuang, Chiashain
Lee, Changgu
Holtzman, Luke N.
Barmak, Katayun
Watanabe, Kenji
Taniguchi, Takashi
Hone, James
Kim, Young Duck
Yoo, Won Jong
Kim, Gil-Ho
Abstract
Extensive research has been conducted on negative differential transconductance (NDT) devices due to their promise in various applications, such as low-power logical circuits, memories, oscillators, and high-speed switches. This study demonstrates the fabrication of a heterojunction consisting of MoSe2 and coupled h-BN/WSe2. This heterojunction involves a broken gap band alignment, resulting in electrostatically controlled NDT from multilayered MoSe2, showing double NDT peaks and a peak-to-valley current ratio higher than 102 at 77 K. The NDT behavior was observed in the multilayer MoSe2 at a very low VD of 0.01 V, showing that the device can be used for low-power applications. To gain a deeper understanding of the transport mechanisms of the NDT device under different bias situations, an investigation was conducted on the electrical transport characteristics at low temperatures (77–350 K). This approach significantly streamlines the circuit design process compared to traditional technologies developing frequency doublers and phase shift keying circuits.
Subjects
Double NDT peaks
MoSe2/WSe2 heterostructure
Multi-value logic device
NDT MoSe2
Negative differential transconductance
Vertical device
Publisher
Elsevier BV
Type
journal article