Preparation of NSC Project Repor ts
Date Issued
2000-07-31
Date
2000-07-31
Author(s)
DOI
892215E002023
Abstract
Abstract ---- We investigate the photo-enhanced wet
oxidation effects on the optical properties of GaN/InGaN
quantum wells. Oxidation of GaN is found to take place in
phosphorus acid solutions in a pH range from 3 to 4, and
results in a maximum oxidation rate of 224 nm/h. The
spectral red shift and more than 50% enhancement on the
photo-luminescence intensity on the oxidized InGaN QW are
attributed the oxide induced stress and surface passivation
effects.
Subjects
GaN
surface passivation
oxidation
Publisher
臺北市：國立臺灣大學光電工程學研究所
Type
report
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Name
892215E002023.pdf
Size
107 KB
Format
Adobe PDF
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