Traveling-wave photodetectors with high power-bandwidth and gain-bandwidth product performance
Journal
IEEE Journal on Selected Topics in Quantum Electronics
Journal Volume
10
Journal Issue
4
Pages
728-741
Date Issued
2004
Author(s)
Lasaosa, D.
Shi, J.-W.
Pasquariello, D.
Gan, K.-G.
Tien, M.-C.
Chang, H.-H.
Chu, S.-W.
Sun, C.-K.
Chiu, Y.-J.
Bowers, J.E.
Abstract
Traveling-wave photodetectors (TWPDs) are an attractive way to simultaneously maximize external quantum efficiency, electrical bandwidth, and maximum unsaturated output power. We review recent advances in TWPDs. Record high-peak output voltage together with ultrahigh-speed performance has been observed in low-temperature-grown GaAs (LTG-GaAs)-based metal-semiconductor-metal TWPDs at the wavelengths of 800 and 1300 nm. An approach to simultaneously obtain high bandwidth and high external efficiency is a traveling-wave amplifier-photodetector (TAP detector) that combines gain and absorption in either a sequential or simultaneous traveling-wave structure.
SDGs
Type
journal article