A F-band two-element phased-array receiver using reflection-Type vector modulator in 90-nm CMOS technology
Journal
Asia-Pacific Microwave Conference Proceedings, APMC
Journal Volume
3
Date Issued
2015
Author(s)
Abstract
This paper describes a K-band 2-element phase-array receiver in 90 nm CMOS process. The receiver consists of two low noise amplifiers (LNAs), two vector modulators, and a down-converter mixer. The vector modulators are designed using a modified reflection-type in- and quadrature-phase modulator for amplitude and phase control. At 66 GHz, the measured small-signal gain of LNA is 24 dB with a noise figure of 6.9 dB. The measured small-signal gains of the LNA with the vector modulator for the four phase states are higher than 5 dB between 64 and 67 GHz. The measured conversion gain of mixer is 6.7 dB. The measured minimum phase and amplitude errors are 4.8 and 1 dB, respectively. The chip size is 1.45×0.95 mm 2 .
SDGs
Type
conference paper