InGaN-based Micro-LEDs: enhancing efficiency and speed for next-generation visible light communication applications
Part Of
Proceedings of SPIE - The International Society for Optical Engineering
Journal Volume
12886
Start Page
49
ISBN (of the container)
978-151067032-7
Date Issued
2024-03-08
Author(s)
Wei-Ta Huang
Tzu-Yi Lee
Fu-He Hsiao
Wen-Chien Miao
Daisuke Iida
Kuo-Bin Hong
Fang-Chung Chen
Shu-Wei Chang
Ray-Hua Horng
Yu-Heng Hong
Yao-Wei Huang
Kazuhiro Ohkawa
Hao-Chung Kuo
Editor(s)
Hadis Morkoç
Hiroshi Fujioka
Ulrich T. Schwarz
Abstract
Visible light communication (VLC), which utilizes LEDs, promises superior privacy and security and reduced impact on surrounding electronics compared to traditional Wi-Fi. This paper explores the potential of InGaN-based micro-light-emitting diodes (micro-LEDs) in high-speed VLC applications, focusing on yellow-green micro-LEDs with nanoporous distributed Bragg reflector (NP-DBR) and red InGaN micro-LEDs. Yellow-green micro-LEDs achieved a maximum external quantum efficiency (EQE) of 8.7%, bandwidth of 442 MHz, and data rate of 800 Mbit/s, while red micro-LEDs demonstrated an EQE of 5.95%, maximum bandwidth of 424 MHz, and data rate of 800 Mbit/s. The application of four core technologies, including circular devices and electrodes, reduced contact electrode area, atomic layer deposition (ALD) for passivation protection, and multi-chip parallel arrays, enhanced optoelectronic characteristics. This paper also highlights the superior performance of InGaN-based red micro-LEDs with a single quantum well (SQW) structure over double quantum wells (DQWs) for VLC applications. The SQW structure yielded higher maximum EQE, modulation bandwidth, and faster transmission rates, paving the way for the potential of full-color micro-display and high-speed VLC applications.
Event(s)
Gallium Nitride Materials and Devices XIX 2024
SDGs
Publisher
SPIE
Type
conference paper