Shallow-trench-isolation (STI)-induced mechanical-stress-related kink-effect behaviors of 40-nm PD SOI NMOS device

Journal

IEEE Transactions Electron Devices

Journal Volume

55

Journal Issue

6

Pages

1558-1562

Date Issued

2008-06

Author(s)

I. S. Lin

V. C. Su

J. B. Kuo

R. Lee

G. S. Lin

D. Chen

C. S. Yeh

C. T. Tsai

M. Ma

DOI

10.1109/ted.2008.922858

URI

http://scholars.lib.ntu.edu.tw/handle/123456789/342559

Type

journal article