Semipolar (20(2)over-bar1) Single-Quantum-Well Red Light-Emitting Diodes with a Low Forward Voltage
Journal
Japanese Journal of Applied Physics
Journal Volume
52
Journal Issue
8
Date Issued
2013
Author(s)
Kawaguchi, Yoshinobu
Huang, Chia-Yen
Wu, Yuh-Renn
Zhao, Yuji
DenBaars, Steven P.
Nakamura, Shuji
Abstract
We have demonstrated the InGaN/GaN single-quantum-well (SQW) red light-emitting diodes (LEDs) grown on the free-standing GaN (202̄1) substrate with a forward voltage as low as 2.8 V at 20 mA. A low p-GaN growth temperature is required to prevent the structure deterioration during the p-GaN growth. The reduction of the forward voltage was observed as the emission wavelength increased in the (202̄1) SQW LEDs, which is attributed to its reversed polarization-related electric field compared to the conventional c -plane LEDs.
SDGs
Type
journal article