Resonant Tunneling in Si/SiGe Heterostructure
Date Issued
2006
Date
2006
Author(s)
Yang, Jheng-Wei
DOI
en-US
Abstract
Silicon Germanium (SiGe) has the advantage of being fully compatible with the Si-based semiconductor industry. In recent years, SiGe has become much attractive for its properties of high electron mobility and good high-frequency response and has been applied in mobile phone, radio frequency (RF) technology, global positioning system (GPS), power amplifier (PA), wireless LAN and so on. Besides, with the progress of the growth technology, many quantum devices with small sizes have been accomplished. In this thesis, one of the quantum devices, the resonant tunneling diodes (RTDs), with Si/SiGe heterostructure operating at low temperature are reported.
The band alignment of Si/SiGe heterostructure is influenced by the strain effect on Si or SiGe layer. Si/SiGe heterostructure are designed with strain in SiGe layer to confirm strained SiGe layer has higher barriers than the virtual substrate in the conduction band. We have fabricated an n-type Si/SiGe heterostructure RTD by molecular beam epitaxy (MBE) successfully. Peak current of 2.1789E-4 A with peak to valley current ratio of 1.073 has been achieved at low temperature. According to the measurement results, the fabrication process can be modified to elevate the device performance. Finally, the factors that influence the peak to valley current ratio of RTDs are discussed and some suggestions are provided for future work.
Resonant tunneling quantum devices have attracted considerable attention for future logic circuit applications. Thus, the successful combination of SiGe
material and RTDs shows great potential in CMOS circuits.
Subjects
矽
矽鍺
共振穿隧
Si
SiGe
resonant tunneling
Type
thesis
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