Skip to main content
English
中文
Log In
Log in
Log in with ORCID
NTU Single Sign On
Have you forgotten your password?
Home
College of Electrical Engineering and Computer Science / 電機資訊學院
Electrical Engineering / 電機工程學系
A step-by-step experiment of 3C-SiC hetero-epitaxial growth on 4H-SiC by CVD
Details
A step-by-step experiment of 3C-SiC hetero-epitaxial growth on 4H-SiC by CVD
Journal
Applied Surface Science
Journal Volume
357
Pages
985-993
Date Issued
2015
Author(s)
Xin, B.
Jia, R.-X.
Hu, J.-C.
Tsai, C.-Y.
Lin, H.-H.
Zhang, Y.-M.
HAO-HSIUNG LIN
DOI
10.1016/j.apsusc.2015.09.090
URI
https://scholars.lib.ntu.edu.tw/handle/123456789/500385
URL
https://www.scopus.com/inward/record.uri?eid=2-s2.0-84949500366&doi=10.1016%2fj.apsusc.2015.09.090&partnerID=40&md5=817f78e73c7b17b63bd557cebc93a26b
Type
journal article