Characterizations of low-temperature electroluminescence from ZnO nanowire light-emitting arrays on the p-GaN layer
Journal
Optics Letters
Journal Volume
35
Journal Issue
24
Pages
4109
Date Issued
2010
Author(s)
Tzu-Chun Lu
Min-Yung Ke
Sheng-Chieh Yang
Yun-Wei Cheng
Liang-Yi Chen
Guan-Jhong Lin
Yu-Hsin Lu
Jr-Hau He
Hao-Chung Kuo
JianJang Huang
Abstract
Low-temperature electroluminescence from ZnO nanowire light-emitting arrays is reported. By inserting a thin MgO current blocking layer in between ZnO nanowire and p-GaN, high-purity UV light emission at wavelength 398 nm was obtained. As the temperature is decreased, contrary to the typical GaN-based light emitting diodes, our device shows a decrease of optical output intensity. The results are associated with various carrier tunneling processes and frozen MgO defects.
SDGs
Type
journal article