The Low Temperature Multilayer Passivation Films and The Uniform Poly-Si Grain Thin Film Transistors with Application to Organic Light Emitting Diode
Date Issued
2006
Date
2006
Author(s)
Hsueh, Chun-Yuan
DOI
en-US
Abstract
Two important problems concerning the active matrix organic light emitting diode (AMOLED) are considered. The first is the passivation layer to protect the top emitting OLED. The second is to obtain poly-Si thin film transistor with better uniformity and good performance. The a-SiNx film with high optical gap and impermeability fabricated by plasma enhanced chemical vapor deposition (PECVD) has been chosen as the passivation layer. The optimum ratio of reaction gas is Ar-diluded 10 % SiH4 10 sccm, NH3 3 sccm, and N2 197 sccm. The optical gap is higher than 3 eV and deposition temperature could be as low as 60℃ and the film doesn’t show any degradation after removing from the growth chamber for 3000 hours. Combining parylene-C layers and a-SiNx:H layers to form multilayer passivation films on OLED device exhibit a better performance. A method to prepare uniform and large grain size poly-Si was developed. The uniformity of the thin film transistor fabricated by excimer laser annealing (ELA) of amorphous Si with squarelattice metal (Cr/Al) pads on top has been substantially improved. The best on/off current ratio could reach 6 order of magnitude and the mobility could attain 180 cm2/V-sec.
Subjects
薄膜電晶體
TFT
passivation
Type
thesis
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