PMOS Hole Mobility Enhancement Through SiGe Conductive Channel and Highly Compressive ILD- SiNx Stressing Layer

Resource

IEEE Electron Device Letters 29 (1): 86-88

Journal

IEEE Electron Device Letters

Journal Volume

29

Journal Issue

1

Pages

86-88

Date Issued

2008

Date

2008

Author(s)

Liao, Wen-Shiang

Liaw, Yue-Gie

Tang, Mao-Chyuan

Chen, Kun-Ming

Huang, Sheng-Yi

Peng, C.-Y.

URI

Type

journal article

File(s)

Name

86.pdf

Size

354.14 KB

Format

Adobe PDF

Checksum

(MD5):844cc61d725b4ab2c05ebb4739f58c36